Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)

AFM study of ridges in few-layer epitaxi

AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC

✍ Gyan Prakash; Michael A. Capano; Michael L. Bolen; Dmitry Zemlyanov; Ronald G. R 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 720 KB

A characterization of the graphitic overlayer that forms on 4H-SiCð0 0 0 1Þ substrates heated for ten minutes to temperatures T > 1350 °C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increas