## Abstract We present high power mid‐infrared surface‐emitting single mode GaAs‐based quantum cascade lasers (QCLs). By using an air‐AlGaAs waveguide combined with second‐order distributed feedback processing, we obtained optical output, via the surface, above 3W. Surface‐normal dual‐lobe light em
Edge- and surface-emitting 10.1 μm quantum cascade distributed feedback lasers
✍ Scribed by Daniel Hofstetter; Jérôme Faist; Mattias Beck; Antoine Müller; Ursula Oesterle
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 148 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
We present measurement results on high-power low-threshold quantum cascade-distributed feedback lasers emitting infrared radiation at 10:16 m. A lateral current injection scheme allowed the use of a strongly coupled surface grating without metal coverage and epitaxial re-growth. Although this design resulted in a simpliÿed processing, the fabrication of high-performance edge-and surface-emitting devices was demonstrated. For the edge-emitting laser, we used a standard ÿrst-order grating with a period of 1:57 m, and for the surface emitter, a second-order grating with a period of 3:15 m was used. Maximal output powers in excess of 200 mW at 85 K and 70 mW at 300 K were achieved for both conÿgurations. The threshold current densities at 85 K (300 K) were 1:85 kA=cm 2 (5:4 kA=cm 2 ) and 2:1 kA=cm 2 (5:6 kA=cm 2 ) for edge and surface emitters, respectively.
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Quantum cascade lasers operating at ¿ 20 m wavelength are reported. Pulsed operation was obtained up to 140 K with a peak power of few milliwatts at cryogenic temperatures. Laser action originates from interminiband transitions in "chirped" superlattice active regions. The waveguides are based on su
The fabrication of 3.9 -4:2 m mid-infrared surface emitting PbSe quantum dot lasers is reported. The self-assembled PbSe quantum dots are produced molecular beam epitaxy of PbSe on 5.4% lattice-mismatched PbEuTe barrier layers. The whole laser structure, grown on (1 1 1) oriented BaF2 substrates, co