Fabrication of 3.9–4.2 μm mid-infrared surface emitting PbSe/PbEuTe quantum dot lasers using molecular beam epitaxy
✍ Scribed by G. Springholz; T. Schwarzl; W. Heiss; T. Fromherz; G. Bauer; M. Aigle; H. Pascher; I. Vavra
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 191 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
✦ Synopsis
The fabrication of 3.9 -4:2 m mid-infrared surface emitting PbSe quantum dot lasers is reported. The self-assembled PbSe quantum dots are produced molecular beam epitaxy of PbSe on 5.4% lattice-mismatched PbEuTe barrier layers. The whole laser structure, grown on (1 1 1) oriented BaF2 substrates, consists of two high re ectivity epitaxial EuTe=PbEuTe Bragg mirrors and a self-organized PbSe=Pb 1-x EuxTe quantum dot superlattice as active region in between. Narrow laser emission at 4.2-3:9 m induced by optical pumping is achieved at temperatures up to 90 K. The observed simultaneous two-mode laser emission indicates a width of the inhomogeneously broadened PbSe dot gain spectrum of about 20 meV.