EBIC analysis of CuInSe2 devices
β Scribed by W. Chesarek; K. Mitchell; A. Mason; L. Fabick
- Publisher
- Elsevier Science
- Year
- 1988
- Weight
- 628 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0379-6787
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π SIMILAR VOLUMES
Minority carrier diffusion lengths in thin film p-CuInSe2 and n-CdS were determined from the decay of the short-circuit current generated by the electron beam of a scanning electron microscope (SEM) for different accelerating voltages. The bulk diffusion lengths were determined taking into account t
The electrochemical bath used for growing device-quality CIS (CuInSe 2 ) thin films by co-deposition as well as layer-by-layer (LBL) deposition was characterised and optimised with respect to the film properties. The bath composition was varied by changing the Cu, In and Se ion concentrations in spe