Diffusion length determination in thin film CdS/CuInSe2 solar cells by the EBIC method

✍ Scribed by A. Bouazzi; J.J. Loferski; M. Kwietniak; R.R. Arya; M. Sosnowski

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 256 KB
• Volume: 12
• Category: Article
• ISSN: 0378-7753
• DOI: 10.1016/0378-7753(84)80047-6

✦ Synopsis

Minority carrier diffusion lengths in thin film p-CuInSe2 and n-CdS were determined from the decay of the short-circuit current generated by the electron beam of a scanning electron microscope (SEM) for different accelerating voltages. The bulk diffusion lengths were determined taking into account the surface recombination velocity at the scanned surface: they were 0.6/~m in CuInSe2 and 1.17/~m in CdS.

2. Experimental method

Thin CdS/CuInSe2 films were prepared as follows: A 1.5 #m film of CuInSe2 is grown by rf-sputtering on a gold-plated alumina substrate, as des-