Minority carrier diffusion lengths in thin film p-CuInSe2 and n-CdS were determined from the decay of the short-circuit current generated by the electron beam of a scanning electron microscope (SEM) for different accelerating voltages. The bulk diffusion lengths were determined taking into account t
Junction formation and the role of oxygen in thin film CdS/CuInSe2 solar cells
β Scribed by R.J. Matson; R. Noufi
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 55 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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π SIMILAR VOLUMES
The generation rate of electron-hole pairs in the Cu2S layer of a thin film Cu2S/CdS solar cell is calculated according to a semicoherent model. In this model the coherent addition of light waves is strictly limited to the Cu2S layer. In contrast with the results of a fully coherent model, in which
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