✦ LIBER ✦

DØ Layer 0—innermost layer of Silicon Microstrip Tracker

✍ Scribed by K. Hanagaki

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 522 KB
Volume: 569
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2006.09.045

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Operation of the D0 Run IIa Silicon Micr

Operation of the D0 Run IIa Silicon Microstrip Tracker

✍ Barbro Åsman 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 196 KB

Design of an upgraded DØ silicon microst

Design of an upgraded DØ silicon microstrip tracker for Run IIb at the tevatron

✍ K. Hanagaki 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 374 KB

Noise performance of the D0 layer 0 sili

Noise performance of the D0 layer 0 silicon detector

✍ M. Johnson 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 446 KB

A new inner detector called Layer 0 has been added to the existing silicon detector for the DZero colliding beams experiment [V. M. Abazoz et al., Nucl. Instr. and Meth. A 565 (2006) 463]. This detector has an all carbon fiber support structure that employs thin copper clad Kapton sheets embedded in

Optical and structural study of Ge/Si qu

Optical and structural study of Ge/Si quantum dots on Si(1 0 0) surface covered with a thin silicon oxide layer

✍ A. Fonseca; E. Alves; J.P. Leitão; N.A. Sobolev; M.C. Carmo; A.I. Nikiforov 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 178 KB

Study on crystallization of amorphous si

Study on crystallization of amorphous silicon using CeO2 seed layer patterned on the plastic substrate

✍ Myung-suk Shim; M. Gowtham; Do-young Kim; Chang-ki Seo; Junsin Yi 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 269 KB

Many researchers are working these days on crystallization of amorphous silicon (a-Si) for application in thin film transistor-liquid crystal display (TFT-LCD) on the plastic substrate. In this paper, we have presented our work on crystallization of amorphous silicon film using XeCl excimer laser an

Kinetics of reverse resistance recovery

Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250 MeV krypton implantation

✍ N.A. Poklonski; N.I. Gorbachuk; S.V. Shpakovski; V.A. Filipenia; V.A. Skuratov; 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 182 KB

Silicon diodes with pn-junction irradiated with high-energy krypton ions (energy 250 MeV, fluences from 10 8 to 10 9 cm -2 ) were studied, along with diodes irradiated with electrons (energy 3.5 MeV, fluence 10 15 cm À2 ). Diodes irradiated with krypton ions are different in the distance d between t