Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250 MeV krypton implantation
✍ Scribed by N.A. Poklonski; N.I. Gorbachuk; S.V. Shpakovski; V.A. Filipenia; V.A. Skuratov; A. Wieck
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 182 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
Silicon diodes with pn-junction irradiated with high-energy krypton ions (energy 250 MeV, fluences from 10 8 to 10 9 cm -2 ) were studied, along with diodes irradiated with electrons (energy 3.5 MeV, fluence 10 15 cm À2 ). Diodes irradiated with krypton ions are different in the distance d between the metallurgical border of the abrupt asymmetric p + n-junction and the maximum of primary vacancy distribution. Current-voltage characteristics and kinetics of reverse resistance recovery of two groups of diodes d 1 E26.4 mm and d 2 E14.5 mm were investigated. It is established that an increase in distance d resulted in a minor effect on kinetics of reverse resistance recovery of diodes but allows to obtain the decrease of reverse currents by 2-3 times. It is shown that in the transient process of switching of the diodes irradiated with krypton ion fluence of 10 8 cm À2 , the time of reverse resistance recovery may be divided into two intervals (two phases), which are different in the rate of reverse current decrease.