Dynamics of structural defects of LPE-grown Gax-In1−xP Layers

✍ Scribed by Dr. A. Popov; St. Dardjonov; A. Bahnev; Sr. Petrov

• Book ID: 102812279
• Publisher: John Wiley and Sons
• Year: 1989
• Tongue: English
• Weight: 567 KB
• Volume: 24
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170240415

✦ Synopsis

The structural properties of epitaxial GazInl-,P, LPE-grown on (1 11)-oriented GaAssubstrate, have been investigated. Two groups of samples have been distinguished with respect to the lattice parameters of the layers (al) and the substrate (a,) : group A with a1 < a, and Aa/a, = (0.85 + 2.98)%, and group B with al > a, and da/a, = (0.11 + i 1.98)%. Group A is characterized by a structure, including orthogonal, and slanted at 60' towards the surface, linear dislocations, originating from mismatch ones. Group B is characterized by a segmented-surface structure. The optimum conditions for the growth of GaInP layers on GaAs substrates (initial temperature, saturation and composition of the melt, as well as cooling rate) are discussed on the basis of t h e data obtained.