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Structural and electrical characteristics of InGaAsN layers grown by LPE

โœ Scribed by M. Milanova; P. Vitanov; P. Terziyska; G. Popov; G. Koleva

Book ID
116630247
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
414 KB
Volume
346
Category
Article
ISSN
0022-0248

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The structural properties of epitaxial GazInl-,P, LPE-grown on (1 11)-oriented GaAssubstrate, have been investigated. Two groups of samples have been distinguished with respect to the lattice parameters of the layers (al) and the substrate (a,) : group A with a1 < a, and Aa/a, = (0.85 + 2.98)%, and