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Dynamic SPICE-simulation of the electrothermal behavior of SOI MOSFET's

✍ Scribed by Bielefeld, J.; Pelz, G.; Abel, H.B.; Zimmer, G.


Book ID
114536332
Publisher
IEEE
Year
1995
Tongue
English
Weight
696 KB
Volume
42
Category
Article
ISSN
0018-9383

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## Abstract This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified Shichman–Hodges model, in which the generation current,