## Abstract Recently we developed a model for symmetric doubleβgate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ10^14^ to 3Γ10^18^βcm^β3^. The model covers a wide range of technological parameters and includes short channe
Enabling a compact model to simulate the RF behavior of MOSFETs in SPICE
β Scribed by Reydezel Torres-Torres; Roberto Murphy-Arteaga
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 347 KB
- Volume
- 15
- Category
- Article
- ISSN
- 1096-4290
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