Dynamic response of a Ta2O5-gate pH-sensitive field-effect transistor
β Scribed by Hirokazu Hara; Tatsuya Ohta
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 326 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0925-4005
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π SIMILAR VOLUMES
High sensitivity to chemical species of sub-micron gap Suspended-Gate FETs (more than 200 mV/pH for example) is explained from the charge distribution induced by the high field in the sub-micronic gap under the gate-bridge. Modeling of Metal-Electrolyte-Insulator-Silicon (MEIS) capacitor, which is t
Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta 2 O 5 ) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employ