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The super-Nernstian pH sensitivity of Ta2O5-gate ISFETs

✍ Scribed by A.S. Poghossian


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
341 KB
Volume
7
Category
Article
ISSN
0925-4005

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Modeling the high pH sensitivity of Susp
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High sensitivity to chemical species of sub-micron gap Suspended-Gate FETs (more than 200 mV/pH for example) is explained from the charge distribution induced by the high field in the sub-micronic gap under the gate-bridge. Modeling of Metal-Electrolyte-Insulator-Silicon (MEIS) capacitor, which is t