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Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon

✍ Scribed by Di, Z. F.; Huang, M. Q.; Wang, Y. Q.; Nastasi, M.


Book ID
120267400
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
794 KB
Volume
97
Category
Article
ISSN
0003-6951

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