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Duty ratio-controlled surface oughness of silicon nitride film deposited using room-temperature SiH4−NH3−N2Plasma

✍ Scribed by Daehyun Kim; Byungwhan Kim; Yong-Ho Seo

Book ID
111857080
Publisher
The Korean Institute of Metals and Materials
Year
2010
Tongue
English
Weight
523 KB
Volume
6
Category
Article
ISSN
1738-8090

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Improved surface passivation of silicon nitride films requires a high positive charge density. A neural network model of SiN charge density was used to investigate temperature effects on charge density. For a systematic modeling, the deposition process was characterized by means of a face-centered B