For some dry etching applications in III-V semiconductors, such as via hole formation in InP substrates, the currently used plasma chemistries have etch rates that are too slow by up to a factor of 30. We report on the development of three new classes of discharge chemistries, namely C12-CH4-H2-Ar a
✦ LIBER ✦
Dry-etching techniques and chemistries for III–V semiconductors
✍ Scribed by S.J. Pearton
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 1011 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0921-5107
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