𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

✍ Scribed by Rhew, Jung-Hoon; Lundstrom, Mark S.


Book ID
121365265
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
292 KB
Volume
92
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Inversion layer electron transport in 4H
✍ Tilak, Vinayak 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 491 KB

## Abstract Silicon carbide is the only compound semiconductor with silicon dioxide as its native oxide and can form metal–oxide–semiconductor field‐effect transistors. In this article, we review the inversion layer electron transport properties of 4H‐SiC/SiO~2~. The inversion layer electron transp