The channel mobility degradation in a nanoscale metal–oxide–semiconductor field effect transistor due to injection from the ballistic contacts

✍ Scribed by Riyadi, Munawar A.; Arora, Vijay K.

• Book ID: 120587207
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 736 KB
• Volume: 109
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3554623