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Double-Pulsed Growth of InN by RF-MBE

✍ Scribed by Andreas Kraus, Heiko Bremers, Uwe Rossow…


Book ID
120946300
Publisher
Springer US
Year
2013
Tongue
English
Weight
728 KB
Volume
42
Category
Article
ISSN
0361-5235

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In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized by HR-XRD exhibit good crystalline quality and homogeneity of the grown layers. The incorporation efficiency of In into the InGaN layer was

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## Abstract We have succeeded in dramatically decreasing the density of dislocations in InN by regrowing InN films on micro‐facetted N‐polar InN templates. The micro‐facetted N‐polar InN templates were formed by wet etching in a 10 mol/l KOH solution. InN films were regrown on the micro‐facetted N‐