Double-Pulsed Growth of InN by RF-MBE
✍ Scribed by Andreas Kraus, Heiko Bremers, Uwe Rossow…
- Book ID
- 120946300
- Publisher
- Springer US
- Year
- 2013
- Tongue
- English
- Weight
- 728 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0361-5235
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📜 SIMILAR VOLUMES
In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized by HR-XRD exhibit good crystalline quality and homogeneity of the grown layers. The incorporation efficiency of In into the InGaN layer was
## Abstract We have succeeded in dramatically decreasing the density of dislocations in InN by regrowing InN films on micro‐facetted N‐polar InN templates. The micro‐facetted N‐polar InN templates were formed by wet etching in a 10 mol/l KOH solution. InN films were regrown on the micro‐facetted N‐