TEM characterization of InN films grown by RF-MBE
โ Scribed by T. Araki; S. Ueta; K. Mizuo; T. Yamaguchi; Y. Saito; Y. Nanishi
- Book ID
- 118286108
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 282 KB
- Volume
- 0
- Category
- Article
- ISSN
- 1862-6351
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## Abstract We have succeeded in dramatically decreasing the density of dislocations in InN by regrowing InN films on microโfacetted Nโpolar InN templates. The microโfacetted Nโpolar InN templates were formed by wet etching in a 10 mol/l KOH solution. InN films were regrown on the microโfacetted Nโ
The observation of bandgap reduction in InAsN by optical absorption is often somewhat obscure due to the band-filling effect caused by the high electron concentration associated with N incorporation. In this report, the detailed photoluminescence properties of 1.6-mm-thick InAsN films grown on semi-