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Double-peak-structured photoluminescence mechanisms of porous silicon

✍ Scribed by Fang, X. H. ;Liao, M. X. ;Gu, Y. ;Wu, X. L.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
117 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We have fabricated porous silicon films with photoluminescence (PL) peak wavelengths in the range of 560–710 nm. It was found that a double‐peak‐structured PL band frequently appears in such porous silicon films with central PL peak positions in the range of 590–660 nm. When their PL excitation spectra show a redshift with increasing monitored emission wavelength, these PL spectra generally have broader linewidths than those with PL peak positions beyond 590–660 nm. Based on the result of the self‐consistent effective‐mass calculation, we have attributed the two PL peaks in the double‐peak structure to band‐to‐band recombination in the quantum‐confined Si nanocrystals and optical transitions in the Si=O binding states at the surfaces of Si nanocrystals, respectively. This work improves the understanding of the double‐peak‐structured PL origin in porous silicon. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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