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Photoluminescence and structural analysis of terbium doped porous silicon

โœ Scribed by Moadhen, A. ;Elhouichet, H. ;Ferid, M. ;Daoudi, K. ;Canut, B. ;Sandu, C. S. ;Oueslati, M. ;Roger, J. A.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
136 KB
Volume
197
Category
Article
ISSN
0031-8965

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## Abstract We have fabricated porous silicon films with photoluminescence (PL) peak wavelengths in the range of 560โ€“710 nm. It was found that a doubleโ€peakโ€structured PL band frequently appears in such porous silicon films with central PL peak positions in the range of 590โ€“660 nm. When their PL ex