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Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation

✍ Scribed by M Posselt; J Teichert; L Bischoff; S Hausmann


Book ID
114164439
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
977 KB
Volume
178
Category
Article
ISSN
0168-583X

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