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Doping process control in silicon epitaxy (II). Calculation of optimum control

✍ Scribed by Dr. P. Valkó; Dipl.-Chem. G. Kósza; Dr. F. Richter

Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
264 KB
Volume
18
Category
Article
ISSN
0232-1300

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The transition behaviour of the phosphorus incorporation in silicon epitaxial layers grown in a CVD reactor has been investigated, considering the reactor as a linear control system with u = lg pOpR, ( t ) as the input and y = lg N ( t ) as the output. The response of system to both upward and downw