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Doping of GSMBE-Grown Gallium Nitride Using Silane

โœ Scribed by M. Kappers; J.-L. Guyaux; J.-C. Garcia


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
126 KB
Volume
216
Category
Article
ISSN
0370-1972

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Temperature Dependent Photoluminescence
โœ J. Brown; C. Elsass; C. Poblenz; P.M. Petroff; I.S. Speck ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 148 KB ๐Ÿ‘ 2 views

We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 AE 5) nm a