Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots

✍ Scribed by J. Brown; C. Elsass; C. Poblenz; P.M. Petroff; I.S. Speck

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 148 KB
• Volume: 228
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200111)228:1<199::aid-pssb199>3.0.co;2-w

✦ Synopsis

We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 AE 5) nm and heights of (3 AE 1) nm. PL from the quantum dots was compared to that of a gallium nitride growth template film to unambiguously demonstrate the contribution of the QDs to the spectra. Integrated PL intensity was observed to remain strong well above 300 K, and we attribute the decrease in the quantum dot PL at higher temperatures to phonon-mediated carrier ionization of deep level.