𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Doping efficiencies of gas-phase and ion-implantation doped a-Si:H

✍ Scribed by H. Mannsperger; S. Kalbitzer; G. Müller


Book ID
104841432
Publisher
Springer
Year
1986
Tongue
English
Weight
598 KB
Volume
41
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Al, B, and Ga ion-implantation doping of
✍ Evan M. Handy; Mulpuri V. Rao; O. W. Holland; P. H. Chi; K. A. Jones; M. A. Dere 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 198 KB
Ion Implantation and Synthesis of Materi
✍ Nastasi, Michael; Mayer, James W. 📂 Article 📅 2006 🏛 Springer Berlin Heidelberg 🌐 German ⚖ 676 KB

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant