Doping effects on 1.54 μm photoluminescence from Er-containing ZnO
✍ Scribed by Zhen Zhou; Toshitaka Komori; Tatsuya Ayukawa; Atsushi Koizumi; Noriaki Matsunami; Yoshikazu Takeda; Masahiko Morinaga
- Book ID
- 103876147
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 130 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0925-3467
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Porous anodic alumina matrices covered with spin-on erbium-doped In 2 O 3 xerogel films have been synthesized and investigated by photoluminescence (PL) spectroscopy. At room temperature an emission at 1.54 lm associated with 4 I 13/2 ! 4 I 15/2 transitions of Er 3+ ions has been observed for the ex
Er-doped amorphous SiO x thin films with different oxygen contents (0pxp2) were prepared by co-evaporation of Si and SiO 2 . The evolution of the structure of the annealed films was followed by infrared absorption spectrometry. With annealing treatment, a phase separation process occurs, leading to