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Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe

✍ Scribed by T. Ishiyama; S. Yoneyama; Y. Yamashita; Y. Kamiura; T. Date; T. Hasegawa; K. Inoue; K. Okuno

Book ID: 108239022
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 135 KB
Volume: 376-377
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2005.12.031

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Enhancement of photoluminescence at 1.54&#xa0;μm from Er in strained Si and SiGe

Enhancement of photoluminescence at 1.54 μm from Er in strained Si and SiGe