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Doping dependence of the energy of peak spontaneous emission from n-type GaAs excited by a 40 kV electron beam at 300 °K

✍ Scribed by Biswas, S. N. ;Rakshit, S. ;Chakravarti, A. N.


Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
170 KB
Volume
8
Category
Article
ISSN
0031-8965

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