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Doping behavior of silicon in vapor-grown III–V epitaxial films

✍ Scribed by H.B. Pogge; B.M. Kemlage

Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
672 KB
Volume
31
Category
Article
ISSN
0022-0248

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llealizatiuii of Optiiiiuin Coiitrul Fuiictiun ## 1. I n Crod uct,iuii 'l'lie topic of this paper is the fortilation of defined doping profilcs in silicon epitaxial layers grown hy chetiiical vapour deposition. For t.his purpose we treat,ed the epitaxial reactor as a linear cont,rol systeni, using