Dopant, defects and oxygen interaction in MeV implanted Czochralski silicon
β Scribed by A. La Ferla; G. Galvagno; V. Raineri; F. Priolo; A. Carnera; A. Gasparotto; E. Rimini
- Book ID
- 113284918
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 508 KB
- Volume
- 96
- Category
- Article
- ISSN
- 0168-583X
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π SIMILAR VOLUMES
## q Ε½ . The dopant and associated damage profiles in 2 MeV Er ion-implanted 100 Si were investigated using Rutherford Ε½ . backscattering spectroscopy and channelling RBSrC technology. A convolution program was used to extract the concentration distributions of Er from the measured RBS spectra. Wh
## Abstract The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germaniumβdoped CZ (GCZ) silicon is presented. The formation of oxygen