Dopant concentration measurements in hydrogenated amorphous silicon films by glow discharge optical spectroscopy

✍ Scribed by J.C. Zesch; R.A. Lujan; V.R. Deline

• Publisher: Elsevier Science
• Year: 1980
• Weight: 350 KB
• Volume: 2
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(80)90013-7

✦ Synopsis

R.f. glow discharge optical spectroscopy (GDOS) is demonstrated to be a useful technique with which to measure absolute dopant concentrations in hydrogenated amorphous silicon (a-Si:H) films. The measurement technique and method of calibration are described. GDOS measurements of boron concentrations in plasma-deposited boronated hydrogenated amorphous silicon (a-Si:H:B) films are correlated with deposition conditions. Each film examined was found to have a significantly (up to 4.8 times) higher boron-to-silicon ratio than that of its deposition plasma.