## Abstract A 800‐MHz power amplifier is designed using a 0.18‐μm RF CMOS process. The voltage‐combining method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class‐D d
Doherty power amplifier with cascaded peaking cells
✍ Scribed by Mun-Woo Lee; Sang-Ho Kam; Yong-Sub Lee; Yoon-Ha Jeong
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 903 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
The Doherty power amplifier (DPA) with cascaded peaking cells is reported.The auxiliary peaking cell at the input of the main peaking cell is employed to enhance the efficiency and linearity of DPA. For the experimental validation, the main DPA and an auxiliary peaking cell are designed using Si LDMOSFETs and a GaN HEMT, respectively. From the measured results, the power‐added efficiency is increased at a 6‐dB back‐off power and the adjacent channel leakage ratio is enhanced over a whole output power range. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:208–211, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25682
📜 SIMILAR VOLUMES
## Abstract A Doherty power amplifier (DPA) with a self‐adaptive biasing circuit is presented in this letter. The proposed structure is integrated into the gate biasing network of the peaking power amplifier (PA), and then the gate voltage can be adaptively adjusted with the input power. Due to the
## Abstract A highly efficient and linear inverted Doherty power amplifier (IDPA) with unsymmetrical delay path is presented. To compensate the phase difference between carrier and peaking cells, an additional offset line is inserted at the input path of the carrier cell. For verification, the IDPA
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