Development of single-stage and doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope and high peak to average power ratio wireless standards
✍ Scribed by Jorge Moreno; Jie Fang; Roberto Quaglia; Vittorio Camarchia; Marco Pirola; Giovanni Ghione
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 476 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This article describes the design, realization, and characterization of a set of hybrid medium‐power RF power amplifiers, based on a commercial packaged GaN HEMT and developed through a low‐cost microstrip process. Two different design solutions suitable for wireless applications are presented: the first, intended for a constant envelope modulation (with reference to the GSM standard) is a Class F amplifier exhibiting at 900 MHz an efficiency of 72% with an output power of 37.5 dBm; the second, optimized for nonconstant envelope signals with high dynamics (with reference to the UMTS WCDMA standard) is a Doherty amplifier showing, at 2.14 GHz, an efficiency higher than 40% at 6 dB of output power back‐off with a maximum output power of 40 dBm. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:206–210, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26459