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DLTS investigation on the interaction of radiation defects with thermal defects in Czochralski p-Si

โœ Scribed by Schmalz, K. ;Bolotov, V. V. ;Richter, H. ;Tittelbach-helmrich, K.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
249 KB
Volume
95
Category
Article
ISSN
0031-8965

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## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in pโ€Si are revealed. The thermal annealing effect on the electrical properties o