Interface of atomic layer deposited Al2O
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Gao, K. Y. ;Speck, F. ;Emtsev, K. ;Seyller, Th. ;Ley, L. ;Oswald, M. ;Hansch, W.
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Article
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2006
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John Wiley and Sons
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English
β 559 KB
## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative highβΞΊ gate dielectric on hydrogenβterminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron Xβray Photoelectron Specβtroscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and