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Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface

✍ Scribed by Dawei Yan; Hai Lu; Dunjun Chen; Rong Zhang; Youdou Zheng; Xu Qian; Aidong Li


Book ID
113916142
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
370 KB
Volume
72
Category
Article
ISSN
0038-1101

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## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative high‐κ gate dielectric on hydrogen‐terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X‐ray Photoelectron Spec‐troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and