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Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic

✍ Scribed by G. É. Tsirlin; V. N. Petrov; N. K. Polyakov; S. A. Masalov; A. O. Golubok; D. V. Denisov; Yu. A. Kudryavtsev; B. Ya. Ber; V. M. Ustinov


Book ID
110120218
Publisher
Springer
Year
1999
Tongue
English
Weight
553 KB
Volume
33
Category
Article
ISSN
1063-7826

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