Dissipative Tunnelling of Charge Carriers from Shallow Impurities

✍ Scribed by A. Dargys; N. Žurauskienė

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 111 KB
• Volume: 210
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199812)210:2<835::aid-pssb835>3.0.co;2-d

✦ Synopsis

Experimental results on field ionization of shallow impurities in GaAs:Be and Ge:Sb,P are presented. In both materials enhacement of the impurity-to-band tunnelling rate was observed when lattice temperature was raised. Acoustic phonon-assisted and -activated tunnelling mechanisms are employed to explain the observed results. In case of activated tunnelling the importance of excited impurity states in the field ionization is emphasized. The role of heavy and light hole masses in an acceptor-to-valence band tunnelling process is discussed, too.