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Important role of shallow impurities in carrier recombination in SiC

✍ Scribed by W.M Chen; N.T Son; E Sörman; O Kordina; J.P Bergman; A Henry; B Monemar; E Janzèn

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
86 KB
Volume
93
Category
Article
ISSN
0038-1098

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Pulsed EPR studies of shallow donor impu
Pulsed EPR studies of shallow donor impurities in SiC
✍ J. Isoya; T. Ohshima; N. Morishita; T. Kamiya; H. Itoh; S. Yamasaki 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 207 KB

Spin-lattice relaxation time ðT 1 Þ and phase memory time ðT M Þ of shallow donors in 3C-, 4H-and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T 1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donor