Pulsed EPR studies of shallow donor impurities in SiC

✍ Scribed by J. Isoya; T. Ohshima; N. Morishita; T. Kamiya; H. Itoh; S. Yamasaki

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 207 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.097

✦ Synopsis

Spin-lattice relaxation time ðT 1 Þ and phase memory time ðT M Þ of shallow donors in 3C-, 4H-and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T 1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P.