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Injection of charge carriers from a point contact

✍ Scribed by A.K. Lahiri; A.K. Maiti; K. Goswami

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
174 KB
Volume
59
Category
Article
ISSN
0038-1098

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Experimental results on field ionization of shallow impurities in GaAs:Be and Ge:Sb,P are presented. In both materials enhacement of the impurity-to-band tunnelling rate was observed when lattice temperature was raised. Acoustic phonon-assisted and -activated tunnelling mechanisms are employed to ex