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Displacements of Sb atoms in supersaturated Sb-doped Si layer formed by molecular beam epitaxy growth

✍ Scribed by Zhu, Lei; Thompson, Phillip E.; Zhang, Xinghang; Hollander, Mark; Shao, Lin


Book ID
120088109
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
346 KB
Volume
101
Category
Article
ISSN
0021-8979

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