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Dislocation interactions in silicon by combined X-ray topography electron microscopy observations

✍ Scribed by Armigliato, A. ;Servidori, M.

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
265 KB
Volume
25
Category
Article
ISSN
0031-8965

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## Abstract Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in ato