𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes

✍ Scribed by V. Polojärvi; A. Schramm; A. Aho; A. Tukiainen; M. Pessa

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
345 KB
Volume
42
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electron and hole levels of InAs quantum
Electron and hole levels of InAs quantum dots in a GaAs matrix
✍ M. Henini; P.N. Brounkov; A. Polimeni; S.T. Stoddart; P.C. Main; L. Eaves; A.R. 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 110 KB

Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 • C. The use of n-and p-type GaAs matrices allows u

Influence of In0.15Ga0.85As capping laye
Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots
✍ Mirja Richter; Dirk Reuter; Jean-Yves Duboz; Andreas D. Wieck 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 346 KB

Self-assembled InAs/(In,Ga)As quantum dots were embedded into n-or p-type Schottky diodes to investigate the conduction and valence band states, respectively. The samples were prepared by molecular beam epitaxy, and capacitance-voltage (C(V)) spectroscopy as well as photoluminescence (PL) measuremen