✦ LIBER ✦

Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100)

✍ Scribed by L.F. Lastras-Martínez; A. Lastras-Martínez

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 416 KB
Volume: 98
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(95)00721-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of plastic deformation on the EPR

Effect of plastic deformation on the EPR spectrum of semi-insulating GaAs:Cr

✍ Wosiński, T. 📂 Article 📅 1980 🏛 John Wiley and Sons 🌐 English ⚖ 199 KB

Influence of non-stoichiometry on the re

Influence of non-stoichiometry on the recombination activity of dislocations in undoped semi-insulating GaAs crystals

✍ Dr. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 281 KB 👁 2 views

A comparison of the deep donor (EL2)0 an

A comparison of the deep donor (EL2)0 and strain distributions in dislocated and dislocation-free semi-insulating undoped GaAs

✍ D.A.O. Hope; M.S. Skolnick; B. Cockayne; J. Woodhead; R.C. Newman 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 310 KB

Geometrical Magnetoresistance Effect in

Geometrical Magnetoresistance Effect in Semiconductors with Mixed Conductivity. Determination of the Electron Hall Mobility in Semi-Insulating GaAs

✍ Betko, J. ;Měřínský, K. 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 402 KB

On the Reasons Leading to an Appearance

On the Reasons Leading to an Appearance of Correlated and Anticorrelated Dependences of the Minority Carrier Lifetime on the Dislocation Density in Undoped Semi-Insulating “Stoichiometric” GaAs Crystals

✍ Dr.; Prof. K. D. Glinchuk; Dr.; Prof. A. V. Prokhorovich 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 227 KB 👁 2 views

It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom