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Dislocation emission at junctions between Σ=3 grain boundaries in gold thin films

✍ Scribed by G. Lucadamo; D.L. Medlin


Book ID
104402787
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
556 KB
Volume
50
Category
Article
ISSN
1359-6454

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The effects of phot~iaduced hole doping on the transport properties of YBa2Cu30,, thin films and grain boundary junctions are studied using high-power-density He-Ne laser light. Subs'tantial photoinduced enhancements of both conductivity and Te are observed for thin films with an oxygen content y an