Photoinduced hole doping effects in YBa2Cu3Oy thin films and grain boundary junctions

✍ Scribed by K. Tanabe; S. Kubo; F. Hosseini Teherani; H. Asano; M. Suzuki

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 304 KB
• Volume: 235-240
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(94)91756-6

✦ Synopsis

The effects of phot~iaduced hole doping on the transport properties of YBa2Cu30,, thin films and grain boundary junctions are studied using high-power-density He-Ne laser light. Subs'tantial photoinduced enhancements of both conductivity and Te are observed for thin films with an oxygen content y and Te of up to 6.8 and 87 K, respectively. This fact as well as the very slight y dependence of the number of photoinduced holes in the CuO 2 plane favor the photoassisted oxygen ordering mechanism. Similar photoexcitation in grain boundary junctions induces a substantial le enhancement well below Tc which can be primarily explained by the hole doping of the degraded regions with oxygen deficiency and/or disorder near the grain boundary'.