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Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

✍ Scribed by E. I. Goldman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva

Book ID: 111444693
Publisher: Springer
Year: 2010
Tongue: English
Weight: 193 KB
Volume: 44
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782610080105

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